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? 2007 microchip technology inc. ds21354d-page 1 tc1072/tc1073 features: ? 50 a ground current for longer battery life ? very low dropout voltage ? choice of 50 ma (tc1072) and 100 ma (tc1073) output ? high output voltage accuracy ? standard or custom output voltages ? power-saving shutdown mode ? error output can be used as a low battery detector or processor reset generator ? bypass input for ultra quiet operation ? overcurrent and overtemperature protection ? space-saving 6-pin sot-23 package ? pin compatible upgrades for bipolar regulators ? standard output voltage options: - 1.8v, 2.5v, 2.6v, 2.7v, 2.8v, 2.85v, 3.0v, 3.3v, 3.6v, 4.0v, 5.0v ? other output voltages are available. please contact microchip technology inc. for details. applications: ? battery operated systems ? portable computers ? medical instruments ? instrumentation ? cellular/gsm/phs phones ? linear post-regulators for smps ? pagers typical application circuit general description the tc1072 and tc1073 are high accuracy (typically 0.5%) cmos upgrades for older (bipolar) low dropout regulators. designed specifically for battery-operated systems, the devices? cmos construction eliminates wasted ground current, signi ficantly extending battery life. total supply current is typically 50 a at full load (20 to 60 times lower than in bipolar regulators). the devices? key features include ultra low noise operation (plus optional by pass input); very low dropout voltage (typically 85 mv, tc1072 and 180 mv, tc1073 at full load) and fast response to step changes in load. an error output (error ) is asserted when the devices are out-of-regulation (due to a low input voltage or excessive output current). error can be used as a low battery warning or as a processor reset signal (with the addition of an external rc network). supply current is reduced to 0.5 a (max) and both v out and error are disabled when the shutdown input is low. the devices incorporate both overtemperature and overcurrent protection. the tc1072 and tc1073 are stable with an output capacitor of only 1 f and have a maximum output current of 50 ma, and 100 ma, respectively. for higher output current versions, please see the tc1185, tc1186, tc1187 (i out = 150 ma) and tc1107, tc1108 and tc1173 (i out = 300 ma) data sheets. package type tc1072 tc1073 v out gnd 1 f + v in v in v out 1 6 2 4 3 shdn shutdown control (from power control logic) erro r error bypass c bypass 470 pf 5 r p 6 1 4 2 3 6-pin sot-23 v out error shdn gnd v in 5 bypass 50ma and 100ma cmos ldos with shutdown, error output and v ref bypass
tc1072/tc1073 ds21354d-page 2 ? 2007 microchip technology inc. 1.0 electrical characteristics absolute maximum ratings? input voltage .........................................................6.5v output voltage........................... (-0.3v) to (v in + 0.3v) power dissipation................internally limited (note 6) maximum voltage on any pin ........v in +0.3v to -0.3v operating temperature range...... -40c < t j < 125c storage temperature..........................-65c to +150c ? note: stresses above those listed under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. tc1072/tc1073 electric al specifications electrical characteristics: unless otherwise noted, v in =v out + 1v, i l = 0.1 ma, c l =3.3 f, s h d n >v ih , t a =+25c. boldface type specifications appl y for junction temperatures of -40c to +125c. symbol parameter min typ max units test conditions v in input operating voltage 2.7 ? 6.0 v note 9 i out max maximum output current 50 100 ? ? ? ? ma ma tc1072 tc1073 v out output voltage v r ? 2.5% v r 0.5% v r + 2.5% v note 1 tcv out v out temperature coefficient ? ? 20 40 ? ? ppm/c note 2 v out / v in line regulation ? 0.05 0.35 %(v r + 1v) v in 6v v out /v out load regulation ? 0.5 2.0 %i l = 0.1 ma to i out max (note 3) v in -v out dropout voltage ? ? ? ? 2 65 85 180 ? ? 120 250 mv i l =0.1ma i l =20ma i l =50ma i l = 100 ma (note 4) , tc1073 i in supply current ? 50 80 a shdn =v ih , i l = 0 (note 8) i insd shutdown supply current ? 0.05 0.5 a shdn =0v psrr power supply rejection ratio ? 64 ? db f re 1khz i out sc output short circuit current ? 300 450 ma v out =0v v out / p d thermal regulation ? 0.04 ? v/w notes 5, 6 t sd thermal shutdown die temperature ? 160 ? c t sd thermal shutdown hysteresis ? 10 ? c en output noise ? 260 ? nv/ hz i l =i out max 470 pf from bypass to gnd note 1: v r is the regulator output voltage setting. for example: v r = 2.5v, 2.7v, 2.85v, 3.0v, 3.3v, 3.6v, 4.0v, 5.0v. 2: 3: regulation is measured at a constant juncti on temperature using low duty cycle pulse testing. load regulation is tested over a load range from 0.1 ma to the maximum specified output current. changes in output voltage due to heating effects are covered by the thermal regulation specification. 4: dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value. 5: thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied, exclu ding load or line regulation effects. specifications are for a current pulse equal to i l max at v in =6v for t=10 ms. 6: the maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and th e thermal resistance from junction-to-air (i.e., t a , t j , ja ). exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. please see section 5.0 ?thermal considerations? for more details. 7: hysteresis voltage is referenced by v r . 8: apply for junction temperatures of -40c to +85c. 9: the minimum v in has to justify the conditions = v in v r +v dropout and v in 2.7v for i l = 0.1 ma to i out max . tc v out = (v out max ? v out min ) x 10 6 v out x t
? 2007 microchip technology inc. ds21354d-page 3 tc1072/tc1073 shdn input v ih shdn input high threshold 45 ? ? %v in v in = 2.5v to 6.5v v il shdn input low threshold ? ? 15 %v in v in = 2.5v to 6.5v error open drain output v in min minimum v in operating voltage 1.0 ? ? v v ol output logic low voltage ? ? 400 mv 1 ma flows to error v th error threshold voltage ? 0.95 x v r ? v see figure 4-2 v hys error positive hysteresis ? 50 ? mv note 7 t delay v out to error delay ? 2.5 ? ms vout falling from v r to v r -10% tc1072/tc1073 electrical spe cifications (continued) electrical characteristics: unless otherwise noted, v in =v out + 1v, i l = 0.1 ma, c l =3.3 f, s h d n >v ih , t a = +25c. boldface type specifications a pply for junction temperatures of -40c to +125c. symbol parameter min typ max units test conditions note 1: v r is the regulator output voltage setting. for example: v r = 2.5v, 2.7v, 2.85v, 3.0v, 3.3v, 3.6v, 4.0v, 5.0v. 2: 3: regulation is measured at a constant juncti on temperature using low duty cycle pulse testing. load regulation is tested over a load range from 0.1 ma to the maximum specified output current. changes in output voltage due to heating effects are covered by the thermal regulation specification. 4: dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value. 5: thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied, exclu ding load or line regulation effects. specifications are for a current pulse equal to i l max at v in =6v for t=10 ms. 6: the maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and th e thermal resistance from junction-to-air (i.e., t a , t j , ja ). exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. please see section 5.0 ?thermal considerations? for more details. 7: hysteresis voltage is referenced by v r . 8: apply for junction temperatures of -40c to +85c. 9: the minimum v in has to justify the conditions = v in v r +v dropout and v in 2.7v for i l = 0.1 ma to i out max . tc v out = (v out max ? v out min ) x 10 6 v out x t
tc1072/tc1073 ds21354d-page 4 ? 2007 microchip technology inc. 2.0 typical characteristics curves note : unless otherwise specified, all part s are measured at temperature = +25c. note: the graphs and tables provided following this note ar e a statistical summary based on a limited number of samples and are provided for informational purposes on ly. the performance characteristics listed herein are not tested or guaranteed. in some graphs or t ables, the data presented ma y be outside the specified operating range (e.g., outside specified power suppl y range) and therefore outs ide the warranted range. 0.000 0.002 0.004 0.006 0.008 0.010 0.012 0.014 0.016 0.018 0.020 -40 -20 0 20 50 70 125 dropout voltage (v) i load = 10ma c in = 1 f c out = 1 f temperature ( c) dropout voltage vs. temperature (v out = 3.3v) 0.000 0.020 0.040 0.060 0.080 0.100 0.120 0.140 0.160 0.180 0.200 -40 -20 0 20 50 70 125 dropout voltage (v) i load = 100ma c in = 1 f c out = 1 f temperature ( c) dropout voltage vs. temperature (v out = 3.3v) 0 10 20 30 40 50 60 70 80 90 gnd current ( a) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 i load = 10ma c in = 1 f c out = 1 f ground current vs. v in (v out = 3.3v) v in (v) 0.000 0.010 0.020 0.030 0.040 0.050 0.060 0.070 0.080 0.090 0.100 -40 -20 0 20 50 70 125 dropout voltage (v) i load = 50ma c in = 1 f c out = 1 f temperature ( c) dropout voltage vs. temperature (v out = 3.3v) 0.000 0.050 0.100 0.150 0.200 0.250 0.300 -40 -20 0 20 50 70 125 dropout voltage (v) i load = 150ma c in = 1 f c out = 1 f temperature ( c) dropout voltage vs. temperature (v out = 3.3v) 0 10 20 30 40 50 60 70 80 90 gnd current ( a) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 i load = 100ma c in = 1 f c out = 1 f ground current vs. v in (v out = 3.3v) v in (v)
? 2007 microchip technology inc. ds21354d-page 5 tc1072/tc1073 note : unless otherwise specified, all part s are measured at temperature = +25c. 0 10 20 30 40 50 60 70 80 gnd current ( a) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 i load = 150ma c in = 1 f c out = 1 f v in (v) ground current vs. v in (v out = 3.3v) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 i load = 100ma c in = 1 f c out = 1 f 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 v in (v) v out (v) v out vs. v in (v out = 3.3v) 3.274 3.276 3.278 3.280 3.282 3.284 3.286 3.288 3.290 -40 -20 -10 0 20 40 85 125 i load = 150ma c in = 1 f c out = 1 f v in = 4.3v temperature ( c) v out (v) output voltage vs. temperature (v out = 3.3v) 0 0.5 1 1.5 2 2.5 3 3.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 i load = 0 c in = 1 f c out = 1 f v in (v) v out (v) v out vs. v in (v out = 3.3v) 3.275 3.280 3.285 3.290 3.295 3.300 3.305 3.310 3.315 3.320 -40 -20 -10 0 20 40 85 125 i load = 10ma c in = 1 f c out = 1 f v in = 4.3v temperature ( c) v out (v) output voltage vs. temperature (v out = 3.3v)
tc1072/tc1073 ds21354d-page 6 ? 2007 microchip technology inc. note : unless otherwise specified, all part s are measured at temperature = +25c. 4.985 4.990 4.995 5.000 5.005 5.010 5.015 5.020 5.025 -40 -20 -10 0 20 40 85 125 i load = 10ma v in = 6v c in = 1 f c out = 1 f temperature ( c) output voltage vs. temperature (v out = 5v) v out (v) 0 10 20 30 40 50 60 70 -40 -20 -10 0 20 40 85 125 gnd current ( a) i load = 10ma v in = 6v c in = 1 f c out = 1 f temperature ( c) temperature vs. quiescent current (v out = 5v) 4.974 4.976 4.978 4.980 4.982 4.984 4.986 4.988 4.990 4.992 4.994 -40 -20 -10 0 20 40 85 125 i load = 150ma v in = 6v c in = 1 f c out = 1 f temperature ( c) output voltage vs. temperature (v out = 5v) v out (v) temperature vs. quiescent current (v out = 5v) 0 10 20 30 40 50 60 70 80 -40 -20 -10 0 20 40 85 125 gnd current ( a) i load = 150ma v in = 6v c in = 1 f c out = 1 f temperature ( c) 10.0 1.0 0.1 0.0 0.01k 0.1k 1k 10k 100k 1000k frequency (hz) output noise vs. frequency noise ( v/ hz) r load = 50 c out = 1 f c in = 1 f c byp = 0 1000 100 10 1 0.1 0.01 0 10 20 30 40 50 60 70 80 90 100 load current (ma) stability region vs. load current c out esr ( ) c out = 1 f to 10 f stable region s table re g io n -30 -35 -40 -45 -50 -60 -55 -65 -70 -75 -80 0.01k 0.1k 1k 10k 100k 1000 k frequency (hz) power supply rejection ratio psrr (db) i out = 10ma v in dc = 4v v in ac = 100mv p-p v out = 3v c in = 0 c out = 1 f
? 2007 microchip technology inc. ds21354d-page 7 tc1072/tc1073 note : unless otherwise specified, all part s are measured at temperature = +25c. v out measure rise time of 3.3v ldo with bypass capacitor conditions: c in = 1 f, c out = 1 f, c byp = 470pf, i load = 100ma v in = 4.3v, temp = 25 c, rise time = 448 s v shdn measure fall time of 3.3v ldo with bypass capacitor conditions: c in = 1 f, c out = 1 f, c byp = 470pf, i load = 50ma v in = 4.3v, temp = 25 c, fall time = 100 s v out v shdn measure rise time of 3.3v ldo without bypass capacitor conditions: c in = 1 f, c out = 1 f, c byp = 0pf, i load = 100ma v in = 4.3v, temp = 25 c, rise time = 184 s v out v shdn measure fall time of 3.3v ldo without bypass capacitor conditions: c in = 1 f, c out = 1 f, c byp = 0pf, i load = 100ma v in = 4.3v, temp = 25 c, fall time = 52 s v out v shdn
tc1072/tc1073 ds21354d-page 8 ? 2007 microchip technology inc. note : unless otherwise specified, all part s are measured at temperature = +25c. measure rise time of 5.0v ldo with bypass capacitor conditions: c in = 1 f, c out = 1 f, c byp = 470pf, i load = 100ma v in = 6v, temp = 25 c, rise time = 390 s v out v shdn measure fall time of 5.0v ldo with bypass capacitor conditions: c in = 1 f, c out = 1 f, c byp = 470pf, i load = 50ma v in = 6v, temp = 25 c, fall time = 167 s v out v shdn measure rise time of 5.0v ldo without bypass capacitor conditions: c in = 1 f, c out = 1 f, c byp = 0pf, i load = 100ma v in = 6v, temp = 25 c, rise time = 192 s v out v shdn measure fall time of 5.0v ldo without bypass capacitor conditions: c in = 1 f, c out = 1 f, c byp = 0pf, i load = 100ma v in = 6v, temp = 25 c, fall time = 88 s v out v shdn
? 2007 microchip technology inc. ds21354d-page 9 tc1072/tc1073 note : unless otherwise specified, all part s are measured at temperature = +25c. i load v out load regulation of 3.3v ldo conditions: c in = 1 f, c out = 2.2 f, c byp = 470pf, v in = v out + 0.25v, temp = 25 c i load = 50ma switched in at 10khz, v out is ac coupled load regulation of 3.3v ldo conditions: c in = 1 f, c out = 2.2 f, c byp = 470pf, v in = v out + 0.25v, temp = 25 c i load = 150ma switched in at 10khz, v out is ac coupled i load v out load regulation of 3.3v ldo conditions: c in = 1 f, c out = 2.2 f, c byp = 470pf, v in = v out + 0.25v, temp = 25 c i load = 100ma switched in at 10khz, v out is ac coupled i load v out v in v out line regulation of 3.3v ldo conditions: v in = 4v, + 1v squarewave @ 2.5khz c in = 0 f, c out = 1 f, c byp = 470pf, i load = 100ma, v in & v out are ac coupled
tc1072/tc1073 ds21354d-page 10 ? 2007 microchip technology inc. note : unless otherwise specified, all part s are measured at temperature = +25c. line regulation of 5.0v ldo conditions: v in = 6v, + 1v squarewave @ 2.5khz v in v out c in = 0 f, c out = 1 f, c byp = 470pf, i load = 100ma, v in & v out are ac coupled v out thermal shutdown response of 5.0v ldo conditions: v in = 6v, c in = 0 f, c out = 1 f i load was increased until temperature of die reached about 160 c, at which time integrated thermal protection circuitry shuts the regulator off when die temperature exceeds approximately 160 c. the regulator remains off until die temperature drops to approximately 150 c.
? 2007 microchip technology inc. ds21354d-page 11 tc1072/tc1073 3.0 pin descriptions the descriptions of the pins are listed in table 3-1 . table 3-1: pin function table 3.1 input voltage supply (v in ) connect unregulated input supply to the v in pin. if there is a large distance between the input supply and the ldo regulator, some input capacitance is necessary for proper operation. a 1 f capacitor connected from v in to ground is recommended for most applications. 3.2 ground (gnd) connect the unregulated input supply ground return to gnd. also connect the negative side of the 1 f typical input decoupling capacitor close to gnd and the negative side of the output capacitor c out to gnd. 3.3 shutdown control input (shdn ) the regulator is fully enabled when a logic-high is applied to shdn . the regulator enters shutdown when a logic-low is applied to shdn . during shutdown, output voltage falls to zero, error is open-circuited and supply current is reduced to 0.5 a (maximum). 3.4 out-of-regulation flag (error ) error goes low when v out is out-of-tolerance by approximately ? 5%. 3.5 reference bypass input (bypass) connecting a 470 pf to this input further reduces output noise. 3.6 regulated voltage output (v out ) connect the output load to v out of the ldo. also connect the positive side of the ldo output capacitor as close as possible to the v out pin. pin no. (6-pin sot-23) symbol description 1v in unregulated supply input. 2 gnd ground terminal. 3 shdn shutdown control input. 4error out-of-regulation flag. (open drain output). 5 bypass reference bypass input. 6v out regulated voltage output.
tc1072/tc1073 ds21354d-page 12 ? 2007 microchip technology inc. 4.0 detailed description the tc1072 and tc1073 are precision fixed output voltage regulators. (if an adjustable version is desired, please see the tc1070/tc1071/tc1187 data sheet.) unlike bipolar regulators, the tc1072 and tc1073?s supply current does not increase with load current. in addition, v out remains stable and within regulation over the entire 0 ma to i out max load current range, (an important consideration in rtc and cmos ram battery back-up applications). figure 4-1 shows a typical application circuit. the regulator is enabled any time the shutdown input (shdn ) is at or above v ih , and shutdown (disabled) when shdn is at or below v il . shdn may be controlled by a cmos logic gate, or i/o port of a microcontroller. if the shdn input is not required, it should be connected directly to the input supply. while in shutdown, supply current decreases to 0.05 a (typical), v out falls to zero volts, and error is open- circuited. figure 4-1: typical application circuit. 4.1 error open-drain output error is driven low whenever v out falls out of regulation by more than ?5% (typical). this condition may be caused by low input voltage, output current limiting, or thermal limiting. the error output voltage value (e.g. error =v ol at 4.75v (typical) for a 5.0v regulator and 2.85v (typical) for a 3.0v regulator). error output operation is shown in figure 4-2 . note that error is active tdelay (typically, 2.5 s) after v out falls to v th , and inactive when v out rises above v th by v hys . as shown in figure 4-1 , error can be used as a battery low flag, or as a processor reset signal (with the addition of timing capacitor c 2 ). r 1 x c 2 should be chosen to maintain error below v ih of the processor reset input for at least 200 m s to allow time for the system to stabilize. pull-up resistor r 1 can be tied to v out , v in or any other voltage less than (v in + 0.3v). figure 4-2: error output operation. 4.2 output capacitor a 1 f (minimum) capacitor from v out to ground is recommended. the output capacitor should have an effective series resistance greater than 0.1 and less than 5.0 , and a resonant frequency above 1 mhz. a 1 f capacitor should be connected from v in to gnd if there is more than 10 in ches of wire between the regulator and the ac filter capacitor, or if a battery is used as the power source. aluminum electrolytic or tantalum capacitor types can be used. (since many aluminum electrolytic capacitors freeze at approximately -30c, solid tantalums are recommended for applications operating below -25c.) when operating from source s other than batteries, supply-noise rejection and transient response can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques. 4.3 bypass input a 470 pf capacitor connected from the bypass input to ground reduces noise present on the internal reference, which in turn significantly reduces output noise. if output noise is not a concern, this input may be left unconnected. larger capacitor values may be used, but results in a longer time period to rated output voltage when power is initially applied. tc1072 tc1073 v out shdn gnd error 1 f c1 + v in v out shutdown control (to cmos logic or tie to v in if unused) 1 f + battery + 0.2 f c2 c2 required only if error is used as a processor reset signal (see text) r1 1m v+ battlow or reset bypass c3, 470 pf v th v out error v ih v ol hysteresis (v h ) t delay
? 2007 microchip technology inc. ds21354d-page 13 tc1072/tc1073 5.0 thermal considerations 5.1 thermal shutdown integrated thermal protection circuitry shuts the regulator off when die temperature exceeds 160c. the regulator remains off until the die temperature drops to approximately 150c. 5.2 power dissipation the amount of power the regulator dissipates is primarily a function of input and output voltage, and output current. the following equation is used to calculate worst-case actual power dissipation: equation 5-1: the maximum allowable power dissipation ( equation 5-2 ) is a function of the maximum ambient temperature (t a max ), the maximum allowable die tem- perature (t j max ) and the thermal resistance from junc- tion-to-air ( ja ). the 6-pin sot-23 package has a ja of approximately 220c/watt. equation 5-2: equation 5-1 can be used in conjunction with equation 5-2 to ensure regulator thermal operation is within limits. for example: given: v in max = 3.0v 5% v out min = 2.7v ? 2.5% i load max = 40 ma t j max = 125c t a max = 55c find: 1. actual power dissipation 2. maximum allowable dissipation actual power dissipation: p d (v inmax ? v outmin )i loadmax = [(3.0 x 1.05) ? (2.7 x 0.975)] x 40 x 10 ?3 = 20.7 mw maximum allowable power dissipation: in this example, the tc1072 dissipates a maximum of 20.7 mw; below the allowable limit of 318 mw. in a similar manner, equation 5-1 and equation 5-2 can be used to calculate maximum current and/or input voltage limits. 5.3 layout considerations the primary path of heat conduction out of the package is via the package leads. therefore, layouts having a ground plane, wide traces at the pads, and wide power supply bus lines combine to lower ja and therefore increase the maximum allowable power dissipation limit. where: p d (v inmax ? v outmin )i loadmax p d v in max v out min i load max = worst-case actual power dissipation = minimum regulato r output voltage = maximum output (load) current = maximum voltage on v in p dmax = (t jmax ? t amax ) ja where all terms are previously defined. p dmax = (t jmax ? t amax ) ja = (125 ? 55) 220 = 318 mw
tc1072/tc1073 ds21354d-page 14 ? 2007 microchip technology inc. 6.0 packaging information 6.1 package marking information 6.2 taping form (v) tc1072 code tc1073 code 1.8 ey fy 2.5 e1 f1 2.6 et ft 2.7 e2 f2 2.8 ez fz 2.85 e8 f8 3.0 e3 f3 3.3 e4 f4 3.6 e9 f9 4.0 e0 f0 5.0 e6 f6 1 & = part number code + threshold voltage 2 (two-digit code) 3 represents year and quarter code 4 represents production lot id code w, width of carrier tape user direction of feed p,pitch standard reel component orientation reverse reel component orientation pin 1 device marking pin 1 carrier tape, number of components per reel and reel size package carrier width (w) pitch (p) part per full reel reel size 6-pin sot-23 8 mm 4 mm 3000 7 in
? 2007 microchip technology inc. ds21354d-page 15 tc1072/tc1073 6-lead plastic small outline transistor (ch) [sot-23] notes: 1. dimensions d and e1 do not include mold flash or protrusions. mold flash or protrusions shall not exceed 0.127 mm per side. 2. dimensioning and tolerancing per asme y14.5m. bsc: basic dimension. theoretically exact value shown without tolerances. note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging units millimeters dimension limits min nom max number of pins n 6 pitch e 0.95 bsc outside lead pitch e1 1.90 bsc overall height a 0.90 ? 1.45 molded package thickness a2 0.89 ? 1.30 standoff a1 0.00 ? 0.15 overall width e 2.20 ? 3.20 molded package width e1 1.30 ? 1.80 overall length d 2.70 ? 3.10 foot length l 0.10 ? 0.60 footprint l1 0.35 ? 0.80 foot angle 0 ? 30 lead thickness c 0.08 ? 0.26 lead width b 0.20 ? 0.51 b e 4 n e 1 p in 1 i d b y l as e r mar k d 1 2 3 e e1 a a1 a2 c l l 1 microchip technology drawing c04-028b
tc1072/tc1073 ds21354d-page 16 ? 2007 microchip technology inc. notes:
? 2007 microchip technology inc. ds21354d-page 17 tc1072/tc1073 appendix a: revision history revision d (february 2007) ? page 1 : ground current changed to 50 a. ? package type changed from sot-23a to sot-23. ? added voltage options. ?t delay added to table 1-1. ? section 3.0 ?pin descriptions? : added pin descriptions. ? section 4.1 ?error open-drain output? : defined t delay . ? changed figure 4-2. ? updated packaging information. revision c (january 2006) ? undocumented changes. revision b (may 2002) ? undocumented changes. revision a (march 2002) ? original release of this document.
tc1072/tc1073 ds21354d-page 18 ? 2007 microchip technology inc. notes:
? 2007 microchip technology inc. ds21354d-page 19 tc1072/tc1073 product identification system to order or obtain information, e.g., on pricing or de livery, refer to the factory or the listed sales office . part no. ? x xxxxx threshold package temperature range device device tc1072: cmos ldo with shutdown, error output & v ref bypass tc1073: cmos ldo with shutdown, error output & v ref bypass threshold voltage (typical) 1.8 = 1.8v 2.5 = 2.5v 2.6 = 2.6v 2.7 = 2.7v 2.8 = 2.8v 2.85 = 2.85v 3.0 = 3.0v 3.3 = 3.3v 3.6 = 3.6v 4.0 = 4.0v 5.0 = 5.0v temperature range v = -40 c to +125 c package ch713 = plastic small outline transistor (ch) sot-23, 6 lead, (tape and reel). examples: a) tc1072-1.8vch713: 1.8v b) tc1072-2.5vch713 2.5v c) tc1072-2.6vch713 2.6v d) tc1072-2.7vch713 2.7v e) tc1072-2.8vch713 2.8v f) tc1072-2.85vch713 2.85v g) tc1072-3.0vch713 3.0v h) tc1072-3.3vch713 3.3v i) tc1072-3.6vch713 3.6v j) tc1072-4.0vch713 4.0v k) tc1072-5.0vch713 5.0v a) tc1073-1.8vch713: 1.8v b) tc1073-2.5vch713 2.5v c) tc1073-2.6vch713 2.6v d) tc1073-2.7vch713 2.7v e) tc1073-2.8vch713 2.8v f) tc1073-2.85vch713 2.85v g) tc1073-3.0vch713 3.0v h) tc1073-3.3vch713 3.3v i) tc1073-3.6vch713 3.6v j) tc1073-4.0vch713 4.0v k) tc1073-5.0vch713 5.0v x.x voltage
tc1072/tc1073 ds21354d-page 20 ? 2007 microchip technology inc. notes:
? 2007 microchip technology inc. ds21354d-page 21 information contained in this publication regarding device applications and the like is prov ided only for your convenience and may be superseded by updates. it is your responsibility to ensure that your application me ets with your specifications. microchip makes no representations or warranties of any kind whether express or implied, written or oral, statutory or otherwise, related to the information, including but not limited to its condition, quality, performance, merchantability or fitness for purpose . microchip disclaims all liability arising from this information and its use. use of microchip devices in life support and/or safe ty applications is entirely at the buyer?s risk, and the buyer agrees to defend, indemnify and hold harmless microchip from any and all damages, claims, suits, or expenses resulting fr om such use. no licenses are conveyed, implicitly or ot herwise, under any microchip intellectual property rights. trademarks the microchip name and logo, the microchip logo, accuron, dspic, k ee l oq , k ee l oq logo, micro id , mplab, pic, picmicro, picstart, pro mate, powersmart, rfpic, and smartshunt are registered trademarks of microchip technology incorporated in the u.s.a. and other countries. amplab, filterlab, linear active thermistor, migratable memory, mxdev, mxlab, ps logo, seeval, smartsensor and the embedded control solutions company are registered trademarks of microc hip technology incorporated in the u.s.a. analog-for-the-digital age, a pplication maestro, codeguard, dspicdem, dspicdem.net, dspicworks, ecan, economonitor, fansense, flexrom, fuzzylab, in-circuit serial programming, icsp, icepic, mindi, miwi, mpasm, mplab certified logo, mplib, mplink, pickit, picdem, picdem.net, piclab, pictail, powercal, powerinfo, powermate, powertool, real ice, rflab, rfpicdem, select mode, smart serial, smarttel, total endurance, uni/o, wiperlock and zena are trademarks of microchip technology incorporated in the u.s.a. and other countries. sqtp is a service mark of mi crochip technology incorporated in the u.s.a. all other trademarks mentioned herein are property of their respective companies. ? 2007, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. note the following details of the code protection feature on microchip devices: ? microchip products meet the specification cont ained in their particular microchip data sheet. ? microchip believes that its family of products is one of the mo st secure families of its kind on the market today, when used i n the intended manner and under normal conditions. ? there are dishonest and possibly illegal meth ods used to breach the code protection fe ature. all of these methods, to our knowledge, require using the microchip pr oducts in a manner outside the operating specif ications contained in microchip?s data sheets. most likely, the person doing so is engaged in theft of intellectual property. ? microchip is willing to work with the customer who is concerned about the integrity of their code. ? neither microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as ?unbreakable.? code protection is constantly evolving. we at microchip are committed to continuously improving the code protection features of our products. attempts to break microchip?s c ode protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your softwar e or other copyrighted work, you may have a right to sue for relief under that act. microchip received iso/ts-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona, gresham, oregon and mountain view, california. the company?s quality system processes and procedures are for its pic ? mcus and dspic ? dscs, k ee l oq ? code hopping devices, serial eeproms, microperipherals, nonvolatile memory and analog products. in addition, microchip?s quality system for the design and manufacture of development syst ems is iso 9001:2000 certified.
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